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Diffusion and Atomic Hopping of N Atoms on Ru(0001) Studied by Scanning Tunneling Microscopy. Physical Review Letters 242.
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273 (5282), S. 1688 - 1690 (1996)
Identification of the "Active Sites" of a Surface-Catalyzed Reaction. Science 243.
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63 (3-4), S. 227 - 238 (1996)
A 200 kV electron microscope with Schottky field emitter and a helium-cooled superconducting objective lens. Ultramicroscopy Buchkapitel (13)
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Localized turbulence and cellular structures in systems with global coupling. In: Nonlinear Physics of Complex Systems, 1 Aufl., S. 149 - 165 (Hg. Parisi, J.; Müller, S. C.; Zimmermann, W.). Springer, Berlin, Heidelberg (1996)
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Partial Cross Sections and Angular Distributions. In: VUV and Soft X-Ray Photoionization, 1 Aufl., S. 135 - 180 (Hg. Shirley, D. A.). Springer, Boston, MA (1996)
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Photoionization Dynamics Studied by Coincidence Spectroscopy. In: Selected Topics on Electron Physics, 1 Aufl., S. 333 - 341 (Hg. Campbell, D. M.; Kleinpoppen, H.). Springer, Boston, MA (1996)
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Clean and Modified Oxide Surfaces: Structure and Dynamics of Absorbed Molecules. In: Metal-Ligand Interactions, S. 233 - 265 (Hg. Russo, N.; Salahub, D. R.). Springer, Dordrecht (1996)
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Time-Resolved Two-Color Photoelectron Spectroscopy at Bare and Adsorbate Covered Metal Surfaces. In: Ultrafast Phenomena X, 1 Aufl., S. 448 - 449 (Hg. Barbara, P. F.; Fujimoto, J. G.; Knox, W. H.; Zinth, W.). Springer, Berlin, Heidelberg (1996)
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Kinetic Oscillations on Single Crystal Surfaces. In: Surface Science: Principles and Current Applications, S. 203 - 215 (Hg. MacDonald, R. J.; Taglauer, E. C.; Wandelt, K. R.). Springer, Berlin, Heidelberg (1996)
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Electronic Excitations at Oxide Surfaces. In: Elementary Processes in Excitations and Reactions on Solid Surfaces, S. 56 - 77 (Hg. Okiji, A.; Kasai, H.; Makoshi, K.). Springer, Berlin, Heidelberg (1996)
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95 (Hg. Hawkes, P. W.) (1996)
Ernst Ruska (1906–1988), Designer Extraordinaire of the Electron Microscope: A Memoir. In: Advances in Imaging and Electron Physics, Bd. 252.
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Size Dependent CO Dissociation on Rh Particles Supported on Thin Alumina Films. In: Elementary Processes in Excitations and Reactions on Solid Surfaces, S. 210 - 216 (Hg. Okiji, A.; Kasai, H.; Makoshi, K.). Springer, Berlin, Heidelberg (1996)
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Homoepitaxial growth of metals and the role of surfactants. In: Surface science: principles and current applications ; [based on invited lectures presented ... at the German-Australian Workshop on Surface Science held at Schloß Ringberg, Tegernsee, Germany, in January 1994], S. 219 - 231 (Hg. MacDonald, R. J.; Taglauer, E. C.; Wandelt, K. R.). Springer, Berlin (1996)
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The Application of Surface Physics in Catalysis Science: Understanding Heterogeneous Catalysts for Partial Oxidation. In: Surface Science, S. 293 - 320 (Hg. MacDonald, R. J.; Taglauer, E. C.; Wandelt, K. R.). Springer, Berlin (1996)
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nm-Semiconductor Particles and Molecular Aggregates as Redox Species. In: Fine Particles Science and Technology, 1 Aufl., S. 591 - 608 (Hg. Pelizzetti, E.). Springer, Dordrecht (1996)
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Adsorption on Epitaxial Oxide Films as Model Systems for Heterogeneous Catalysis. In: Surface Science, 1. Ed. Aufl., S. 193 - 202 (Hg. MacDonald, R. J.; Taglauer, E. C.; Wandelt, K. R.). Springer, Berlin (1996)
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23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996. 23rd International Conference on the Physics of Semiconductors, Berlin, Germany, 21. Juli 1996 - 26. Juli 1996. World Scientific, Singapore (1996), 3450 S.
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Reaction Dynamics of H2/Si: A 5-D Model. In: Elementary Processes in Excitations and Reactions on Solid Surfaces, S. 3 - 25 (Hg. Okiji, A.; Kasai, H.; Makoshi, K.). 18th Taniguchi Symposium, Kashikojima, Japan, 22. Januar 1996 - 27. Januar 1996. Springer, Berlin (1996)
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Ab initio Molecular Dynamics Study of D2 Desorption from Si(100). In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings], S. 951 - 954 (Hg. Scheffler, M.). International Conference on the Physics of Semiconductors (ICPS), Berlin, 21. Juli 1996 - 26. Juli 1996. World Scientific, Singapore (1996)
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Diffusivity of Ga and Al adatoms on GaAs(001). In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings], S. 1031 - 1034 (Hg. Scheffler, M.). International Conference on the Physics of Semiconductors (ICPS), Berlin, Germany, 21. Juli 1996 - 26. Juli 1996. (1996)