Brenig, W.; Groß, A.; Höfer, U.; Kratzer, P.; Russ, R.: Reaction Dynamics of H₂/Si: A 5-D Model. In: Elementary Processes in Excitations and Reactions on Solid Surfaces, S. 3 - 25 (Hg. Okiji, A.; Kasai, H.; Makoshi, K.). 18th Taniguchi Symposium, Kashikojima, Japan, 22. Januar 1996 - 27. Januar 1996. Springer, Berlin (1996)

Groß, A.; Bockstedte, M.; Scheffler, M.: Ab initio Molecular Dynamics Study of D₂ Desorption from Si(100). In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings], S. 951 - 954 (Hg. Scheffler, M.). International Conference on the Physics of Semiconductors (ICPS), Berlin, 21. Juli 1996 - 26. Juli 1996. World Scientific, Singapore (1996)

Kley, A.; Scheffler, M.: Diffusivity of Ga and Al adatoms on GaAs(001). In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings], S. 1031 - 1034 (Hg. Scheffler, M.). International Conference on the Physics of Semiconductors (ICPS), Berlin, Germany, 21. Juli 1996 - 26. Juli 1996. (1996)

Mattila, T.; Seitsonen, A. P.; Nieminen, R. M.: Ab-initio study of nitrogen antisites in GaN and InN. In: Proceedings of the First Symposium on III-V Nitride Materials and Processes, S. 205 - 211. III-V nitride materials and processes, Los Angeles, CA, 06. Mai 1996 - 08. Mai 1996. (1996)

Muhler, M.; Rosowski, F.; Hinrichsen, O.; Hornung, A.; Ertl, G.: Ruthenium as catalyst for ammonia synthesis. In: Proceedings of the 11th International Congress On Catalysis - 40th Anniversary, Bd. 101, S. 317 - 326 (Hg. Hightower, J. W.; Delgass, W. N.; Iglesia, E.; Bell, A. T.). 11th International Congress On Catalysis - 40th Anniversary, Baltimore, MD, USA, 30. Juni 1996 - 05. Juli 1996. Elsevier (1996)

Neugebauer, J.; Van de Walle, C. G.: Role of defects and impurities in doping of GaN. In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings], S. 2849 - 2856 (Hg. Scheffler, M.). International Conference on the Physics of Semiconductors (ICPS), Berlin, 21. Juli 1996 - 26. Juli 1996. World Scientific, Singapore (1996)

Pehlke, E.: Surface stress and the mesoscopic structure of solid surfaces. In: Thermodynamics of Surfaces: Minisymposium, May 11 - 13, 1995, S. 144 - 163 (Hg. Muschik, W.; Papenfuss, C.). Technische Universität, Berlin (1996)

Pehlke, E.; Moll, N.; Scheffler, M.: The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate. In: 23rd International Conference on the Physics of Semiconductors, S. 1301 - 1304 (Hg. Zimmermann, R.). International Conference on the Physics of Semiconductors, Berlin, Germany, 21. Juli 1996 - 26. Juli 1996. World Scientific, Singapore (1996)

Allongue, P.; Kieling, V.; Gerischer, H.: Etching mechanism and atomic structure of H–Si(111) surfaces prepared in NH₄F. 6th Int. Fischer Symposium on Nanotechniques in Electrochemistry, Univ Karlsruhe, Karlsruhe, Germany, 13. Juni 1994 - 16. Juni 1994. Electrochimica Acta 40 (10), S. 1353 - 1360 (1995)

Ruggerone, P.; Kohler, B.; Wilke, S.; Scheffler, M.: Electronic origin of the H-induced phonon anomalies on Mo(110). In: Electronic Surface and Interface States on Metallic Systems, S. 113 - 126 (Hg. Bertel, E.). 134th W.-E.-Heraeus-Seminar, Honnef, 17. Oktober 1994 - 20. Oktober 1994. World Scientific, Singapore (1995)

Baenitz, M.; Heinze, M.; Lüders, K.; Werner, H.; Schlögl, R.: Susceptibility Study of Site Selective Doped Fullerenes - K₂RbC₆₀, Rb₃C₆₀, K₂CsC₆₀, and Rb₂CsC₆₀. In: Materials Research Society Symposium Proceedings, Bd. 349, S. 301 - 306. Materials Research Society, Pittsburgh (1994)

Heinemann, M.; Scheffler, M.: The formation of a Schottky barrier: Na on GaAs(110). In: Formation of Semiconductor Interfaces, S. 297 - 300 (Hg. Lengeler, B.; Lüth, H.; Mönch, W.; Pollmann, J.). 4th International Conference on the Formation of Semiconductor Interfaces (ICFSI), Jülich, Germany, 14. Juni 1993 - 18. Juni 1993. World Scientific, Singapore (1994)

Oppo, S.; Fiorentini, V.; Scheffler, M.: Surface alloying and surfactant action of Sb on Ag(111). In: Materials Research Society Symposium Proceedings, Bd. 317, S. 323 - 328. Materials Research Society, New York (1994)

Bosin, A.; Fiorentini, V.; Lastri, A.; Bachelet, G. B.: Pseudohamiltonians and quantum Monte Carlo. In: Materials theory and modelling: symposium, S. 21 - 26 (Hg. Broughton, J.). Materials theory and modelling : symposium, Boston, 30. November 1992 - 03. Dezember 1992. (1993)

Gerischer, H.: Conditions for an efficient photocatalytic activity of TiO₂ particles. In: Photocatalytic Purification and Treatment of Water and Air, S. 1 - 17 (Hg. Ollis, D. F.; Al-Ekabi, H.). First Int. Conf. on TiO(2) Photocatalytic Purification and Treatment of Water and Air, London, Canada, 08. November 1992 - 13. November 1992. Elsevier Science Publ. B.V., Amsterdam (1993)

Kuhlenbeck, H.; Freund, H.-J.: Adsorption and Reaction of Small Molecules on Oxide Surfaces. Australian-German Workshop, Sydney, Australia, 02. Dezember 1991 - 05. Dezember 1991. Surface Science, Principles and Applications, Proceedings of the Australian-German Workshop, Sydney, Australia, December 2-5, 1991, S. 227 - 241 (1993)

Dabrowski, J.; Pehlke, E.; Scheffler, M.: DFT-LDA calculations ofsurface core-level shifts for Si(001), Ge(001), and Ge on Si(001) (2x1) surfaces. In: 21st International Conference on the Physics of Semiconductors: Beijing, China, August 10-14, 1992, S. 389 - 392 (Hg. Jiang, P.; Zheng, H.-Z.). 21st International Conference on the Physics of Semiconductors (ICPS-21), Beijing, China, 10. August 1992 - 14. August 1992. World Scientific, Singapore (1992)

Gerischer, H.: Is cold fusion a reality? The impressions of a critical observer. In: The Science of Cold Fusion, S. 465 - 474 (Hg. Bressani, T.; Del Giudice, E.; and Preparata, G.). 2nd Annual Conf. on Cold Fusion, Como, Italy, 29. Juni 1991 - 04. Juli 1991. Società Italiana di Fisica, Editrice Compositori, Bologna (1991)

Gerischer, H.: Electrochemical solar energy conversion. In: Condensed Matter Physics Aspects of Electrochemistry, S. 489 - 498 (Hg. Tosi, M. P.; Kornyshev, A. A.). Working Party on Electrochemistry: Condensed Matter, Atomic and Molecular Physics Aspects, Int Ctr Theoret Phys, Trieste, Italy, 27. August 1990 - 09. September 1990. World Scientific Publ. Co., Singapore (1991)

Gerischer, H.: The semiconductor–electrolyte interface. In: Condensed Matter Physics Aspects of Electrochemistry, S. 176 - 193 (Hg. Tosi, M. P.; Kornyshev, A. A.). Working Party on Electrochemistry: Condensed Matter, Atomic and Molecular Physics Aspects, Int Ctr Theoret Phys, Trieste, Italy, 27. August 1990 - 09. September 1990. World Scientific Publ. Co., Singapore (1991)