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Bludau, H.; Skottke, M.; Pennemann, B.; Mrozek, P.; Wandelt, K.: Growth of ultrathin Au and Ag films on a modified Ru surface. Vacuum 41 (4-6), S. 1106 - 1108 (1990)

Boettcher, C.; Boekema, E. J.; Fuhrhop, J.-H.: Assignment of two ultrastructures formed by a mixture of hexonamides using autoradiography and electron microscopy. Journal of Microscopy 160 (2), S. 172 - 182 (1990)

Bomarius, A. S.; Holzwarth, J. F.; Wang, D. I. C.; Hatton, T. A.: Coalescence and solubilizate exchange in a cationic four-component reversed micellar system. The Journal of Physical Chemistry 94 (18), S. 7232 - 7239 (1990)

Borland, L.; Heel, M. v.: Classification of image data in conjugate representation spaces. Journal of the Optical Society of America A 7 (4), S. 601 - 610 (1990)

Bose, S. K.; Kudrnovsky, J.; van Schilfgaarde, M.; Blöchl, P.; Jepsen, O.; Methfessel, M.; Paxton, A. T.; Andersen, O. K.: Electronic Structure of Ordered and Disordered Pd_3 Fe. J. of Magnetism and Magnetic Materials 87, S. 97 - 105 (1990)

Böttcher, A.; Imbeck, R.; Morgante, A.; Ertl, G.: Nonadiabatic surface reaction: Mechanism of electron emission in the Cs+O₂ system. Physical Review Letters 65 (16), S. 2035 - 2037 (1990)

Selected Proceedings of the 7th International Conference on Solid Surfaces (ICSS-7), Köln 1989. Vacuum 41 (1990)

Bradshaw, A. M.; Somers, J. S.: X-ray Absorption Spectroscopy of Molecular Adsorbates. Physica Scripta T31, S. 189 - 198 (1990)

Bruhwiler, P. A.; Watson, G. M.; Plummer, E. W.; Sagner, H.-J.; Frank, K.-H.: The Surface Continuum in Inverse Photoemission. EPL 11 (6), S. 573 - 579 (1990)

Brune, H.; Wintterlin, J.; Ertl, G.; Behm, R. J.: Direct Imaging of Adsorption Sites and Local Electronic Bond Effects on a Metal Surface: C/Al(111). EPL 13 (2), S. 123 - 128 (1990)

Caldas, M. J.; Dabrowski, J.; Fazzio, A.; Scheffler, M.: Anion-Antisite-like Defects in III-V Compounds. Proc.20th Int. Conf. on the Physicsof Semiconductors (ICPS-20), S. 469 - 472 (1990)

Caldas, M. J.; Dabrowski, J.; Fazzio, A.; Scheffler, M.: Anion-Antisite-like Defects in III-V Compounds. Physical Review Letters 65 (16), S. 2046 - 2049 (1990)

Caldas, M. J.; Dabrowski, J.; Fazzio, A.; Scheffler, M.: Anion-antisite-like defects in III-V compounds. Physical Review Letters 65 (16), S. 2046 - 2049 (1990)

Caldas, M. J.; Fazzio, A.; Dabrowski, J.; Scheffler, M.: Anion-Antisite Defects in GaAs: As and Sb. Internat. Journal of Quantum Chemistry: Quantum Chemistry Symposium 24, S. 563 - 567 (1990)

Castro, G. R.; Conrad, H.; Doyen, G.; Grillo, M. E.; Hemmen, R.; Isern, H.: Combined experimental and theoretical study of CO on NiAl(110). Vacuum 41 (1-3), S. 731 - 732 (1990)

Chasse, T.; Alonso, M.; Cimino, R.; Horn, K.; Braun, W.: Indium interaction with GaP (110): example of an unreacted interface. Vacuum 41 (4-6), S. 835 - 838 (1990)

Chen, X. H.; Ranke, W.; Schröder-Bergen, E.: Complete valence-band structure of Ge determined by photoemission. Physical Review B 42 (12), S. 7429 - 7433 (1990)

Chmiel, G.; Gerischer, H.: Photoluminescence at a semiconductor-electrolyte contact around and beyond the flat-band potential. The Journal of Physical Chemistry 94 (4), S. 1612 - 1619 (1990)

Cimino, R.; Carbone, C.; Braun , W.: Role of interface gap states during the formation of the Fe-GaAs(110) Schottky barrier. Vacuum 41 (4-6), S. 1062 - 1063 (1990)