Ruggerone, P.; Kley, A.; Scheffler, M.: Microscopic processes behind metal homoepitaxy. In: Proceedings VI Italian-Swiss Workshop on Advances in Computational Materials Science, S. 33 - 42 (Hg. Fiorentini, V.). Italian Swiss Workshop on Advances in Computational Materials Science, Cagliari, 28. September 1996 - 02. Oktober 1996. Italian Physical Society, Bologna (1997)

Schumacher, R.; Lorenz, P.; Karge, H. G.: On the sorption of ethylbenzene in ZSM-5. In: Progress in Zeolite and Microporous Materials, Preceedings of the 11th International Zeolite Conference, S. 1747 - 1754 (Hg. Chon, H.; Ihm, S.-K.; Uh, Y. S.). 11th International Zeolite Conference, Seoul, Korea, 12. August 1996 - 17. August 1996. Elsevier, Amsterdam (1997)

Schumacher, R.; Lorenz, P.; Karge, H. G.: On the sorption of ethylbenzene in ZSM-5. In: Progress in Zeolite and Microporous Materials, S. 1747 - 1754 (Hg. Chon, H.; Ihm, S.-K.; Uh, Y. S.). 11th International Zeolite Conference, Seoul, Korea, 12. August 1996 - 17. August 1996. Elsevier, Amsterdam, Netherlands (1997)

Van de Walle, C. G.; Neugebauer, J.: Theory of point defects and interfaces. In: MRS Proceedings, Bd. 449, S. 861 - 870. Symposium N – III-V Nitrides. (1997)

Weiß, U.; Weihe, M.; Hunger, M.; Karge, H. G.; Weitkamp, J.: The induction period in ethylbenzene disproportionation over large pore zeolites. In: Progress in Zeolite and Microporous Materials: Preceedings of the 11th International Zeolite Conference, S. 973 - 980. 11th International Zeolite Conference, Seoul, Korea, 12. August 1996 - 17. August 1996. Elsevier, Amsterdam (1997)

Witko, M.; Hermann, K.; Tokarz, R.; Michalak, A.: Cluster studies on adsorption and reactions at the V₂O₅(010) surface. Symposium on Studies on Heavy Hydrocarbon Conversion . Preprints / American Chemical Society, Division of Petroleum Chemistry 42, 1 Aufl., S. 94 - 97 (1997)

Wrabetz, S.; Guntow, U.; Schlögl, R.; Karge, H. G.: Preparation and characterisation of ru-exchanged NaY zeolite: An infrared study of CO adsorption at low temperatures. In: Progress in Zeolite and Microporous Materials: Preceedings of the 11th International Zeolite Conference, S. 583 - 590. 11th International Zeolite Conference, Seoul, Korea, 12. August 1996 - 17. August 1996. Elsevier, Amsterdam (1997)

Ziolek, M.; Decyk, P.; Czyzniewska, J.; Karge, H. G.: Catalytic decomposition of organic sulfur compounds—effect of zeolite acidity. In: Progress in Zeolite and Microporous Materials, Preceedings of the 11th International Zeolite Conference, S. 1625 - 1632 (Hg. Chon, H.; Ihm, S.-k.; Uh, Y.-S.). 11th International Zeolite Conference, Seoul, Korea, 12. August 1996 - 17. August 1996. Elsevier, Amsterdam (1997)

Brenig, W.; Groß, A.; Höfer, U.; Kratzer, P.; Russ, R.: Reaction Dynamics of H₂/Si: A 5-D Model. In: Elementary Processes in Excitations and Reactions on Solid Surfaces, S. 3 - 25 (Hg. Okiji, A.; Kasai, H.; Makoshi, K.). 18th Taniguchi Symposium, Kashikojima, Japan, 22. Januar 1996 - 27. Januar 1996. Springer, Berlin (1996)

Groß, A.; Bockstedte, M.; Scheffler, M.: Ab initio Molecular Dynamics Study of D₂ Desorption from Si(100). In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings], S. 951 - 954 (Hg. Scheffler, M.). International Conference on the Physics of Semiconductors (ICPS), Berlin, 21. Juli 1996 - 26. Juli 1996. World Scientific, Singapore (1996)

Kley, A.; Scheffler, M.: Diffusivity of Ga and Al adatoms on GaAs(001). In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings], S. 1031 - 1034 (Hg. Scheffler, M.). International Conference on the Physics of Semiconductors (ICPS), Berlin, Germany, 21. Juli 1996 - 26. Juli 1996. (1996)

Mattila, T.; Seitsonen, A. P.; Nieminen, R. M.: Ab-initio study of nitrogen antisites in GaN and InN. In: Proceedings of the First Symposium on III-V Nitride Materials and Processes, S. 205 - 211. III-V nitride materials and processes, Los Angeles, CA, 06. Mai 1996 - 08. Mai 1996. (1996)

Muhler, M.; Rosowski, F.; Hinrichsen, O.; Hornung, A.; Ertl, G.: Ruthenium as catalyst for ammonia synthesis. In: Proceedings of the 11th International Congress On Catalysis - 40th Anniversary, Bd. 101, S. 317 - 326 (Hg. Hightower, J. W.; Delgass, W. N.; Iglesia, E.; Bell, A. T.). 11th International Congress On Catalysis - 40th Anniversary, Baltimore, MD, USA, 30. Juni 1996 - 05. Juli 1996. Elsevier (1996)

Neugebauer, J.; Van de Walle, C. G.: Role of defects and impurities in doping of GaN. In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings], S. 2849 - 2856 (Hg. Scheffler, M.). International Conference on the Physics of Semiconductors (ICPS), Berlin, 21. Juli 1996 - 26. Juli 1996. World Scientific, Singapore (1996)

Pehlke, E.: Surface stress and the mesoscopic structure of solid surfaces. In: Thermodynamics of Surfaces: Minisymposium, May 11 - 13, 1995, S. 144 - 163 (Hg. Muschik, W.; Papenfuss, C.). Technische Universität, Berlin (1996)

Pehlke, E.; Moll, N.; Scheffler, M.: The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate. In: 23rd International Conference on the Physics of Semiconductors, S. 1301 - 1304 (Hg. Zimmermann, R.). International Conference on the Physics of Semiconductors, Berlin, Germany, 21. Juli 1996 - 26. Juli 1996. World Scientific, Singapore (1996)

Allongue, P.; Kieling, V.; Gerischer, H.: Etching mechanism and atomic structure of H–Si(111) surfaces prepared in NH₄F. 6th Int. Fischer Symposium on Nanotechniques in Electrochemistry, Univ Karlsruhe, Karlsruhe, Germany, 13. Juni 1994 - 16. Juni 1994. Electrochimica Acta 40 (10), S. 1353 - 1360 (1995)

Ruggerone, P.; Kohler, B.; Wilke, S.; Scheffler, M.: Electronic origin of the H-induced phonon anomalies on Mo(110). In: Electronic Surface and Interface States on Metallic Systems, S. 113 - 126 (Hg. Bertel, E.). 134th W.-E.-Heraeus-Seminar, Honnef, 17. Oktober 1994 - 20. Oktober 1994. World Scientific, Singapore (1995)

Baenitz, M.; Heinze, M.; Lüders, K.; Werner, H.; Schlögl, R.: Susceptibility Study of Site Selective Doped Fullerenes - K₂RbC₆₀, Rb₃C₆₀, K₂CsC₆₀, and Rb₂CsC₆₀. In: Materials Research Society Symposium Proceedings, Bd. 349, S. 301 - 306. Materials Research Society, Pittsburgh (1994)

Heinemann, M.; Scheffler, M.: The formation of a Schottky barrier: Na on GaAs(110). In: Formation of Semiconductor Interfaces, S. 297 - 300 (Hg. Lengeler, B.; Lüth, H.; Mönch, W.; Pollmann, J.). 4th International Conference on the Formation of Semiconductor Interfaces (ICFSI), Jülich, Germany, 14. Juni 1993 - 18. Juni 1993. World Scientific, Singapore (1994)