Scientific Publications

Journal Article (22)

1.
Journal Article
Beeler, F.; Scheffler, M.: Calculation of total energies, reaction and diffusion processes of transition-metal point defects in silicon. Proc. Int. Conf. on the Physics of Semiconductors (ICPS-19), pp. 983 - 986 (1989)
2.
Journal Article
Beeler, F.; Scheffler, M.: Theory of 4d-transition-metal ions in silicon: Total-energies, diffusion, electronic and magnetic properties. Mat. Sci. Forum 38-41, pp. 257 - 262 (1989)
3.
Journal Article
Biernacki, S.; Scheffler, M.: Negative thermal expansion of diamond and zinc-blende semiconductors. Physical Review Letters 63, pp. 290 - 293 (1989)
4.
Journal Article
Biernacki, S.; Scherz, U.; Gillert, R.; Scheffler, M.: Calculated thermodynamic potentials for the vacancy and the oxygen a-center in silicon. Mat. Sci. Forum 38-41, pp. 625 - 630 (1989)
5.
Journal Article
Dabrowski, J.; Scheffler, M.: The As_Ga-As_i pair in GaAs, the arsenic antisite and the properties of EL2. Proc. Int. Conf. on the Physics of Semiconductors (ICPS-19), pp. 1023 - 1026 (1989)
6.
Journal Article
Dabrowski, J.; Scheffler, M.: The EL2 defect in GaAs. Mat. Sci. Forum 38-41, pp. 51 - 58 (1989)
7.
Journal Article
Dabrowski, J.; Scheffler, M.: The isolated arsenic antisite defect in GaAs and the properties of EL2. Physical Review B 40, pp. 10391 - 10401 (1989)
8.
Journal Article
Ferm, P.; Budde, F.; Hamza, V.; Jakubith, S.; Ertl, G.; Weide, D.; Andresen, P.; Freund, H.-J.: UV-laser-induced photodesorption of NO from NiO. Surface Science 218 (2-3), pp. 467 - 493 (1989)
9.
Journal Article
Giersig, M.; Kunath, W.; Pribilla, I.; Bandini, G.; Hucho, F.: Symmetry and Dimensions of Membrane-Bound Nicotinic Acetylcholine Receptors from Torpedo californica Electric Tissue: Rapid Rearrangement to Two-Dimensional Ordered Lattices. Membrane Biochemistry 8 (2), pp. 81 - 93 (1989)
10.
Journal Article
Graen, H.H.; Neuber, M.; Neumann, M.; Illing, G.; Freund, H.-J.; Netzer, F.-P.: Thermal evolution of benzene adsorbate phases on a Os(0001) surface. Surface Science 223 (1-2), pp. 33 - 55 (1989)
11.
Journal Article
Kuhlenbeck, H.; Saalfeld, H. B.; Buskotte, U.; Neumann, M.; Freund, H.-J.; Plummer, E. W.: π-d backbonding band dispersion and final-state effects for the (2×1) p2mg phase of CO on Ni(110). Physical Review B 39 (6), pp. 3475 - 3488 (1989)
12.
Journal Article
Meijer, G.; Heinze, J.; Meerts, W. L.; Meulen, J.J. t.; T Hougen, J.: High-resolution spectroscopy on the Ã1B1 (0, 6, 0) ←X̃1A1(0, 0, 0) transition in SiCl2. Journal of Molecular Spectroscopy 138 (1), pp. 251 - 263 (1989)
13.
Journal Article
Montano, P. A.; Zhao, J.; Ramanthan, M.; Shènoy, G. K.; Schulze, W.; Urban, J.: Structure of silver microclusters. Chemical Physics Letters 164 (2-3), pp. 126 - 130 (1989)
14.
Journal Article
Overhof, H.; Scheffler, M.; Weinert, C. M.: Computation of hyperfine interactions for substitutional Se^+ and S^+ impurities in silicon. Mat. Sci. Forum 38-41, pp. 293 - 298 (1989)
15.
Journal Article
Overhof, H.; Scheffler, M.; Weinert, C. M.: Ab-initio calculations of hyperfine fields for chalcogen point defects and defect pairs in silicon: Identification of the pair atomic structure. Materials Science and Engineering B 4, pp. 315 - 319 (1989)
16.
Journal Article
Paál, Z.; Zimmer, H.; Günter, J. R.; Schlögl, R.; Muhler, M.: Sintering of platinum-black in hydrogen: Morphology and catalytic activity. Journal of Catalysis 119 (1), pp. 146 - 160 (1989)
17.
Journal Article
Scheffler, M.: Chemical binding, stability and metastability of defects in semiconductors. Festkörperprobleme 29, pp. 231 - 250 (1989)
18.
Journal Article
Scherz, U.; Weider, D.; Scheffler, M.: Electronic and vibrational properties of deep centers in semiconductors. Egyp. J. Sol. 12, p. 1 (1989)
19.
Journal Article
Wambach, J.; Odörfer, G.; Freund, H.-J.; Kuhlenbeck, H.; Neumann, M.: Influence of alkali co-adsorption on the adsorption and reaction of CO2 on Pd(111). Surface Science 209 (1-2), pp. 159 - 172 (1989)
20.
Journal Article
Weider, D.; Scheffler, M.; Scherz, U.: Parameter-free calculations of the pressure dependence of impurity levels, entropies and of defect-formation volumes. Mat. Sci. Forum 38-41, pp. 299 - 304 (1989)
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