Zeitschriftenartikel (5669)

5601.
Zeitschriftenartikel
Wilke, W. G.; Maierhofer, C.; Horn, K.: Test of band offset commutativity by photoemission from an in situ grown ZnTe/CdS/ZnTe quantum well. Journal of Vacuum Science and Technology B 8 (4), S. 760 - 767 (1990)
5602.
Zeitschriftenartikel
Wilke, W. G.; Seedorf, R.; Horn, K.: Valence band offset and interface chemistry of II–VI epitaxial layers grown on the (110) surface of III–V materials. Journal of Crystal Growth 101 (1-4), S. 620 - 627 (1990)
5603.
Zeitschriftenartikel
Zeitler, E.: Analysis of an imaging magnetic energy filter. Nuclear Instruments and Methods in Physics Research Section A 298 (1-3), S. 234 - 246 (1990)
5604.
Zeitschriftenartikel
Ziolek, M.; Karge, H. G.; Nießen, W.: Reactions of alcohols with hydrogen sulfide over zeolites: IV. The role of acidity in the hydrosulfurization of ethanol over X-type zeolite catalysts. Zeolites 10 (7), S. 662 - 667 (1990)
5605.
Zeitschriftenartikel
Beeler, F.; Scheffler, M.: Calculation of total energies, reaction and diffusion processes of transition-metal point defects in silicon. Proc. Int. Conf. on the Physics of Semiconductors (ICPS-19), S. 983 - 986 (1989)
5606.
Zeitschriftenartikel
Beeler, F.; Scheffler, M.: Theory of 4d-transition-metal ions in silicon: Total-energies, diffusion, electronic and magnetic properties. Mat. Sci. Forum 38-41, S. 257 - 262 (1989)
5607.
Zeitschriftenartikel
Biernacki, S.; Scheffler, M.: Negative thermal expansion of diamond and zinc-blende semiconductors. Physical Review Letters 63, S. 290 - 293 (1989)
5608.
Zeitschriftenartikel
Biernacki, S.; Scherz, U.; Gillert, R.; Scheffler, M.: Calculated thermodynamic potentials for the vacancy and the oxygen a-center in silicon. Mat. Sci. Forum 38-41, S. 625 - 630 (1989)
5609.
Zeitschriftenartikel
Dabrowski, J.; Scheffler, M.: The As_Ga-As_i pair in GaAs, the arsenic antisite and the properties of EL2. Proc. Int. Conf. on the Physics of Semiconductors (ICPS-19), S. 1023 - 1026 (1989)
5610.
Zeitschriftenartikel
Dabrowski, J.; Scheffler, M.: The EL2 defect in GaAs. Mat. Sci. Forum 38-41, S. 51 - 58 (1989)
5611.
Zeitschriftenartikel
Dabrowski, J.; Scheffler, M.: The isolated arsenic antisite defect in GaAs and the properties of EL2. Physical Review B 40, S. 10391 - 10401 (1989)
5612.
Zeitschriftenartikel
Giersig, M.; Kunath, W.; Pribilla, I.; Bandini, G.; Hucho, F.: Symmetry and Dimensions of Membrane-Bound Nicotinic Acetylcholine Receptors from Torpedo californica Electric Tissue: Rapid Rearrangement to Two-Dimensional Ordered Lattices. Membrane Biochemistry 8 (2), S. 81 - 93 (1989)
5613.
Zeitschriftenartikel
Montano, P. A.; Zhao, J.; Ramanthan, M.; Shènoy, G. K.; Schulze, W.; Urban, J.: Structure of silver microclusters. Chemical Physics Letters 164 (2-3), S. 126 - 130 (1989)
5614.
Zeitschriftenartikel
Overhof, H.; Scheffler, M.; Weinert, C. M.: Computation of hyperfine interactions for substitutional Se^+ and S^+ impurities in silicon. Mat. Sci. Forum 38-41, S. 293 - 298 (1989)
5615.
Zeitschriftenartikel
Overhof, H.; Scheffler, M.; Weinert, C. M.: Ab-initio calculations of hyperfine fields for chalcogen point defects and defect pairs in silicon: Identification of the pair atomic structure. Materials Science and Engineering B 4, S. 315 - 319 (1989)
5616.
Zeitschriftenartikel
Paál, Z.; Zimmer, H.; Günter, J. R.; Schlögl, R.; Muhler, M.: Sintering of platinum-black in hydrogen: Morphology and catalytic activity. Journal of Catalysis 119 (1), S. 146 - 160 (1989)
5617.
Zeitschriftenartikel
Scheffler, M.: Chemical binding, stability and metastability of defects in semiconductors. Festkörperprobleme 29, S. 231 - 250 (1989)
5618.
Zeitschriftenartikel
Scherz, U.; Weider, D.; Scheffler, M.: Electronic and vibrational properties of deep centers in semiconductors. Egyp. J. Sol. 12, S. 1 (1989)
5619.
Zeitschriftenartikel
Weider, D.; Scheffler, M.; Scherz, U.: Parameter-free calculations of the pressure dependence of impurity levels, entropies and of defect-formation volumes. Mat. Sci. Forum 38-41, S. 299 - 304 (1989)
5620.
Zeitschriftenartikel
Dabrowski, J.; Scheffler, M.: Ab-initio calculations for native point defects in GaAs. Proc. 5th Conf. on Semi-Insulating III-V Materials, S. 37 - 42 (1988)
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